Staff Device Engineer

Responsibilities: Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).Perform device/process simulations and device layout for GaN power devices. Assignments will include power device creation, fabrication and full characterization, and issuing technical reports. Evaluate electrical / thermal performance and reliability of GaN power devices. Prior experience in Si power device development is a plus. Interact with other departments for best use of Company's technologies and to support key customer requirements.

Requirements: B. Sc degree in Electrical Engineering with 8 years' working experience orM. Sc degree in Electrical Engineering with 6 years' working experience or Ph. D degree in Electrical Engineering with 3 years' working experience Proven track record of independently designing and taking into volume production of high-voltage GaN power devices Sound understanding of semiconductor device physics, especially WBGProficient in TCAD simulation and CADENCE layout tools Hands-on experience with high-voltage testing and data acquisition systems Strong communication and collaboration skills